advanced power n-channel enhancement mode electronics corp. power mosfet so-8 similar area footprint and pin assignment bv dss 40v low gate charge r ds(on) 20m fast switching speed i d 36a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 3.4 /w rthj-a thermal resistance junction-ambient 3 max. 85 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 37 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.29 continuous drain current, v gs @ 10v 23 pulsed drain current 1 120 gate-source voltage 20 continuous drain current, v gs @ 10v 36 parameter rating drain-source voltage 40 200523061-1/4 AP9962GMA pb free plating product g d s s s s g d apak-5 the apak-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 20 m v gs =4.5v, i d =16a - - 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance 2 v ds =10v, i d =20a - 20 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =20a - 14 22 nc q gs gate-source charge v ds =30v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time 2 v ds =20v - 8 - ns t r rise time i d =20a - 48 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 23 - ns t f fall time r d =1 -7- ns c iss input capacitance v gs =0v - 1160 1860 pf c oss output capacitance v ds =25v - 165 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.5 2.25 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =20a, v gs =0v, - 31 - ns q rr reverse recovery charge di/dt=100a/s - 25 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on fr4 board. 2/4 AP9962GMA
ap9962gm a fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3/4 0 30 60 90 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 0.0 2.0 4.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.4 0.8 1.2 1.6 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 10 30 50 70 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 10.0 20.0 30.0 40.0 50.0 0 10203040506070 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =10v
fig7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 ap9962gm a q v g 4.5v q gs q gd q g charge 0 3 6 9 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =25v v ds =30v i d =20a 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c s ingle pulse 0 20 40 60 80 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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